Session 2B-3
NiO Resistance Change Memory
with a Novel Structure
for 3D Integration
and Improved Confinement
of Conduction Path
| We fabricated and characterized nanoscale Ti-doped RRAM arrays with i) a conventional structure where the NiO is in between two metal electrodes, ii) a novel structure where the NiO is deposited over crossing metal lines for improved confinement of conduction path. In the new structure, the memory cells showed lower RESET currents (~90uA), larger ON/OFF ratio and improved LRS uniformity over the conventional structure. The smallest fabricated cell is 48nmX48nm, one of the smallest reported. |