Session 2B-4
Oxide-Based RRAM: Uniformity Improvement
Using A New Material-Oriented Methodology
| A new technical solution is presented to essentially improve the uniformity of RRAM-devices by using material design methodology based on first principle calculations. The results indicate that doping of trivalent elements into the tetravalent metal oxides effectively controls the formation of oxygen vacancy filaments along the doping sites, which helps improving the switching behaviors. The improved uniformity in the Al-doped HfO2 RRAM-devices was demonstrated by experiments and theoretical calculations, proving the validity of the proposed method. |