Session 4B-2
High Quality GeO2/Ge Interface Formed
by SPA Radical Oxidation and Uniaxial Stress Engineering
for High Performance Ge NMOSFETs
| Slot-Plane-Antenna (SPA) radical oxidation of Ge is shown to realize (1) orientation independent, (2) small temperature dependent oxidation, (3) smooth interface and (4) low interface state density. Mobility enhancement under uniaxial stress was demonstrated in (100) Ge NFET fabricated by utilizing SPA radical oxidation, for the first time. Drive current of (100) Ge NFET can be enhanced under uniaxial stress in the ballistic transport regime, which satisfies ITRS 22nm node high performance spec as a Ge CMOS platform. |