Session 4B-5

Impact of EOT scaling down to 0.85nm
on 70nm Ge-pFETs technology with STI

 

Abstract

For the first time, an STI module is integrated in an advanced 70nm Ge-pFET technology allowing EOT scaling down to 0.85nm. Gate leakage is kept below 0.2A/cm2 and ION is increased inversely proportional to the EOT. The impact of this aggressive EOT scaling on hole mobility is also investigated by temperature measurements down to 4K, suggesting the presence of defects at different levels of the Si/SiO2/HfO2 gate stack.