Session 5A-1

High Hole Mobility
in Multiple Silicon Nanowire Gate-All-Around pMOSFETs on (110) SOI

 

Abstract

Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is presented for the first time. [110]-NWs show high mobility, 2.4x enhancement over universal (100) mobility, even in high Ninv region and in narrow (25nm) NWs. Furthermore, effects of uniaxial tensile stress are also investigated, indicating that [110] direction uniaxial stress is effective to modulate hole mobility in NWs.