Session 5A-2

Gate-All-Around Quantum-Wire Field-Effect Transistor
with Dopant Segregation
at Metal-Semiconductor-Metal Heterostucture

 

Abstract

We report the first demonstration of Dopant-Segregated Metal-Semiconductor-Metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. ION enhancement of 72% and 26% over conven-tional QWFETs are obtained for n- and p- DS-MSM QWFETs, respectively. Record high single Si QWFET ION, normalized by quantum wire diameter, of 4.03 mA/É m (n-DS-MSM QWFET) and 1.5 mA/É m (p-DS-MSM QWFET) are reported. In addition, larger ION values are observed for <100> as compared to <110> channel orientation DS-MSM QWFETs.