Session 5A-3

Sub-10 nm Gate-All-Around CMOS Nanowire Transistors
on Bulk Si Substrate

 

Abstract

In this paper, sub-10 nm gate-all-around (GAA) CMOS silicon nanowire field-effect transistors (SNWFET) on bulk Si substrate are fabricated successfully for the first time with 13-nm-diameter silicon nanowire channel. On-state currents of 1494/1054uA/um at off leakage currents of 102/6.44nA/um are obtained for N/PMOS, respectively. The impacts of nanowire diameter (DNW) and gate oxide thickness (TOX) as well S/D parasitic resistance (RSD) on performance are investigated in details.