Session 5A-4

A Novel Thin BOX SOI Technology Using Bulk Si Wafer
for System-on-Chip (SoC) Application

Abstract
In this article, we proposed a novel SOI technology for introducing thin BOX SOI structure into bulk Si wafer and demonstrated novel transistors with the thinnest BOX thickness of 7nm ever reported. They showed good Vth controllability and effective Ion/Ioff controllability. Their small variation was also confirmed. Thus, a novel thin BOX SOI technology must be very useful in controlling the transistor performance/power consumption, as well as in reducing the manufacturing cost.