Session 5B-4

Single Silicide comprising Nickel-Dysprosium Alloy
for Integration in p- and n- FinFETs with Independent Control
of Contact Resistance by Aluminum Implant.

 

Abstract

We report the first demonstration of a single silicide contact technology employing a low workfunction Ni-Dy alloy silicide, while achieving low contact resistance RC, for both n- and p- FETs. For strained p-FinFETs, the Ni(Dy)SiGe contact with Aluminum implant gives ~20 % IDSAT enhancement over the conventional NiSiGe contact. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an IDSAT enhancement of ~49 % over n-FinFETs with NiSi:C contacts.