Session 6A-1
Analysis of Extra VT Variability Sources
in NMOS Using Takeuchi Plot
| Extra VT variability sources in NMOS are investigated using Takeuchi plot. It is clearly shown that VT variation of boron channel NMOS cannot be explained solely by the channel depth profiles. Moreover it is clarified that boron TED is the dominant source of the extra NMOS VT variability. By suppressing the effect of boron TED with backward substrate bias, VT variation of boron channel NMOS comes close to that of phosphorus channel PMOS. |