Session 6A-3

Physical Understanding of Vth
and Idsat Variations in (110) CMOSFETs

 

Abstract

In this paper, the first systematic study of Vth variations and Idsat variations in (110) n/pMOSFETs is presented. Vth variations in (110) n/pFETs with high channel dose are larger than (100) n/pFETs. Steep B profile and moderate P doping into the surface are desirable to minimize Vth variations in (110) FETs. We also found that Idsat variations are determined by both σVth and the degree of velocity saturation.