Session 6A-5

Comprehensive Analysis of Variability Sources
of FinFET Characteristics

 

Abstract

FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of Vt variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization success-fully reduces the variation of parasitic resistance (Rp) due to fin thickness fluctuation as well as Rp itself. FinFET-SRAM performance in 20-nm-Lg node is predicted by the compact model using the measured variation data.