Session 8A-3

SRAMLow Voltage (Vdd~0.6 V) SRAM Operation Achieved
by Reduced Threshold Voltage Variability
in SOTB (Silicon on Thin BOX)

 

Abstract

We have successfully demonstrated "silicon on thin BOX" (SOTB) 6T-SRAM with a 50-nm gate. By employing an ultra low-dose channel, this SOTB achieves small Vth variability. As a result, the SOTB SRAM technology has been successfully developed with 0.142 V of static noise margin at Vdd=0.6 V and Vdd_min of 0.63 V because of its excellent Vth variability characteristics. We also show that SOTB CMOS exhibits superior reliability and noise performance. These characteristics indicate robust properties for future industrial high performance and low power LSIs.