Session 8B-2
Design of High-Performance and Highly Reliable nMOSFETs
with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)
| A Novel strained nMOSFETs with embedded Si:C in S/D extension stressor (Si:C S/D-E) was presented. Comparing to the bulk device, it revealed good drive current ION (+27%), high ID,sat current (+67%), enhanced channel mobility (+105%), at a lower effective substitutional carbon concentration (C%=1.1%), using the poly-gate 40nm-node Si:C/eSiGe S/D CMOS technology. Moreover, PBTI effect was first observed in this device as a result of Carbn impurity out-diffusion, which is of critically important for the design trade-off between performance and reliability. |