Session 9B-1

Programming Characteristics
of the Steep Turn-on/off Feedback FET (FBFET)

 

Abstract

The feedback FET is a new steep turn-on/off transistor which achieves six-orders-of-magnitude current change within a 2mV gate voltage step (0.35mV/decade). This device requires an initial programming or conditioning step. Its threshold voltage may be adjusted by Fowler-Nordheim or hot-carrier charge injection. Programming and operation of the device is explained with simulation and experimental data.