Session 9B-2
Germanium-Source Tunnel Field Effect Transistors
with Record High ION/IOFF
| Tunnel field effect transistors (TFETs) with record high ION/IOFF ratio (>1E6) for low-voltage (0.5V) operation are achieved by using germanium in the source region to achieve a small tunnel bandgap. The measured data are well explained by the theoretical band-to-band tunneling current model. The TFET is projected to provide dramatic improvement in energy efficiency over CMOS for performance in the range up to ~0.5GHz. |