Session 9B-4

A Metallic-CNT-Tolerant Carbon Nanotube Technology
Using Asymmetrically-Correlated CNTs (ACCNT)

Abstract
We demonstrate carbon nanotube field effect transistors (CNFETs) using Asymmetrically-Correlated Carbon Nanotubes (ACCNT, pronounced "accent"), the first demonstration of a VLSI-compatible metallic-CNT-tolerant design methodology. ACCNT CNFETs take advantage of the asymmetric correlation of CNFETs fabricated on aligned carbon nanotubes to achieve both high Ion/Ioff (up to 5x10^4) and high current drive (~10+uA). We can increase metallic-CNT-tolerance arbitrarily close to 100% (we easily attain 90+% in the results); in comparison a conventional CNFET design with similar Ion was only at 19%. More than 200 ACCNT test structures and CNFETs were fabricated to demonstrate and validate the ACCNT concepts.