Session 19-1

A 21nm High Performance 64Gb MLC NAND Flash memory
with 400MB/s Asynchronous Toggle DDR Interface

 

Abstract

A monolithic 64Gb MLC NAND flash based on 21nm process technology has been developed for the first time. The device consists of 4-plane arrays and provides page size of up to 32KB. It also features a newly developed DDR interface that can support up to the maximum bandwidth of 400MB/s. To address performance and reliability, on-chip randomizer, soft data readout, and incremental bit lin precharge scheme have been developed.