Session 19-2

A Fast Rewritable 90nm 512Mb NOR "B4-Flash" Memory
with 8F² Cell Size

 

Abstract

This paper introduces a first 512Mb B4-Flash product chip with 8F2 cell size, which is the smallest NOR cell in the 90nm generation. High rewriting throughput (8MB/s) is realized by 10MB/s programming and 100ms/block erasing without over-erase problem. 10MB/s programming is achieved by 1kB simultaneous programming and proposed fast verify scheme. This work proves that B4-Flash can realize not only high rewriting performance like NAND Flash but also fast random access like conventional NOR Flash.