Session 19-4

A 512Mb Phase-Change Memory (PCM)
in 90nm CMOS achieving 2b/cell

 

Abstract

We present a 256Mcell phase-change memory chip in 90nm CMOS serving as a versatile platform to demonstrate and benchmark multi-level cells. The chip achieves 2b/cell with access times of 320ns and 9.8us for read and write respectively. The mixed-signal circuitry enables up to 4b/cell and includes a programmable controller supporting various programming algorithms. The 6b readout ADC offers high-throughput (690Mb/s) characterization of PCM arrays directly on chip, thereby allowing studies of drift and noise.