Session 28-3

A Content Addressable Memory Using Magnetic Domain Wall Motion Cells

 

Abstract

A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, which is the fastest to date and comparable to that of SRAM-based CAM. The 16-kb CAM macro was fabricated using 90-nm CMOS and domain wall (DW) motion processes. We also propose a multiple context CAM to enhance the SoC's performance. The estimated cell area is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.