Session 10A-4

3D LSI Technology and Reliability Issues

 

Abstract

3D integration is the most promising technology to enhanceLSI performance beyond scaling theory. 3D LSIs have lots of advantages such as short wiring length, small chip size, and small pin capacitances, which leads to low power dissipation and high processing speed. However, there are still reliability problems to be solved. This paper describes mechanical stresses caused by Cu TSVs and CuSn microbumps and design guideline to minimize stress effects on 3D LSIs. Keywords: 3D-LSI, Through-Si via (TSV), Micro-Raman spectroscopy, Stress and Strain