Session 10B-2
Proposal of a Model for Increased NFET Random Fluctuations
Abstract| It is shown, using kinetic Monte Carlo simulation, that variability in the amount of point defects created by source/drain (S/D) implantation can significantly increase NFET random fluctuation through the modulation of boron transient enhanced diffusion (TED). This model is consistent with reported NFET fluctuation behavior. |