Session 10B-4

Comprehensive Study of Systematic and Random Variation
in Gate-Induced Drain Leakage for LSTP Applications

 

Abstract

Systematic and random variability of Gate-Induced Drain Leakage (GIDL) current have been studied for the first time. Trap-assisted tunneling current shows more instability than band-to-band tunneling current in every kinds of variations resulting from high sensitivity of the traps to impurities under MOSFET channel.