Session 11A-1

Comprehensive Understanding of Random Telegraph Noise
with Physics Based Simulation

 

Abstract

Physical modeling of transient and frequency domain noise simulation for random telegraph noise (RTN) is conducted, considering discretized traps and energy transition in insulator. The models are implemented in a 3D device simulator to consider the device structure effect and bias effect universally. Trap density and trap distribution in insulator are predicted quantitatively with comparison of measured data and simulated data. In addition, we present negative pre-pulse effect for RTN reduction.