Session 11A-3
Impact of Random Telegraph Signaling Noise
on SRAM Stability
| Large-signal bias and temperature dependences of random telegraph signaling (RTS) noise in transistors and their impact on the dynamic stability of 6T SRAM cells are investigated. RTS causes fluctuations in SRAM stability that are dependent on cell access history and trap characteristics. Access patterns for characterizing the worst-case and best-case dynamic stability are developed. |