Session 11B-1
Integration of 28nm MJT for 8-16Gb level MRAM
with full investigation of thermal stability
| 28nm MTJ for 8-16Gb MRAM device has been successfully integrated with special etch technique. Resistance separation between high and low R states was 15.2, comparable to that for 80nm MTJ cells. Thermal stability factor followed prediction well, and MTJ with free layer of 25Å and aspect ratio of 3 showed 56. In order to realize sub-30nm MRAM device, a novel FL with substantially low critical current density needs to be developed. |