Session 11B-3

CoFeB/MgO based perpendicular magnetic tunnel junctions
with stepped structure for symmetrizing different retention times
of "0" and "1" information

 

Abstract

We investigated perpendicular magnetic tunnel junctions (p-MTJs) with a stepped structure for spin-transfer torque random access memory. In conventional p-MTJs, the retention time for storing "1" is shorter than that for storing "0," because of the mangetostatic energy difference between the two states caused by dipole interaction. To counter this, we show, by employing a stepped structure, that the retention time can be made equivalent regardless of the stored information.