Session 12-1
Non-Gaussian Distribution of SRAM Read Current
and Design Impact to Low Power Memory
using Voltage Acceleration Method
| SRAM read current tail distribution beyond 6 sigma was studied using Voltage Acceleration Method (VAM). For the first time, non-Gaussian distribution of SRAM read current was confirmed with direct measurements on silicon. Data shows that conventional assumption of Gaussian distribution in read current is inaccurate especially at low Vdd and cold temperature conditions for low power memory in 28nm and beyond technology nodes. In 28nm, this inaccuracy would lead to 2x bit access delay penalty. |