Session 12-3
An Ultra Low-Noise MOSFET device
with improved SNR for DCO-type applications
| An Ultra-Low Noise (ULN) MOSFET device used as a gm-pair in a DCO circuit is presented. Device 1/f noise reduces by >12X while circuit SNR improves by >1.2dB for an optimized process. While strong process correlation for device 1/f noise is seen, a weak correlation at circuit level is noticed. Noise is primarily dependent on halo implant conditions while SNR dispersion is influenced by Fluorine (F) addition. Overall, the ULN device improves SNR yield by ~3% and the optimized circuit-and-device performance is seen for reduced-halo and no-F process condition. |