Session 2A-3

Modeling of Width-Quantization-Induced Variations
in Logic FinFETs for 22nm and Beyond

 

Abstract

The nature of FinFET devices prohibits continuous width scaling and introduces a digitization of device width. This introduces an intrinsic variation in the device that is absent in conventional planar devices. For the first time we address how a composite Fin device can be modeled correctly. We show that the DIBL vs. SS relationship for the composite device is an easily accessible indicator for the intrinsic variations observed in a composite device.