Session 2A-4

Critical Discussion on (100)
and (110) orientation dependent transport:
nMOS Planar and FinFET

 

Abstract

Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.