Session 2B-1

Forming-Free Nitrogen-Doped AlOx RRAM with
Sub-µA Programming Current
Abstract

Nitrogen-doped AlOx Resistive RAM has been integrated on CMOS. The memory cell requires no forming, and sub-µA programming currents. The cell is capable of multi-bit storage, reliable for over 105 switching cycles and 10 years retention at 125°C.