Session 2B-2

Evidences of anodic-oxidation reset mechanism
in TiN/NiO/Ni RRAM cells

 

Abstract

By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide contact-hole cells, we clearly evidence for TiN/NiO/Ni RRAM systems that the reset switching corresponds to a partial Ni-rich filament constriction due to anodic oxidation mechanism at the interface with the Ni anode