Session 2B-3
Resistive Switching AlOx-Based Memory
with CNT Electrode for Ultra-Low Switching Current
and High Density Memory Application
| We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 1O4 cycles with less than 5µA programming current. Ultimate scaling down the device to 6nm x 6nm is realized by the CNT/AlOx/CNT cross-point structure and 1E4 switching cycles are achieved.This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application. |