Session 2B-4

Deterministic and stochastic component
in RESET transient of HfSiO/FUSI gate RRAM stack
Abstract

Analysis of RRAM filament properties in SiO2/HfSiO/NiSi shows how the minimal achievable current in High Resistance State (HRS) depends on the nature of the filament, quantifiable through a quantum mechanical conduction model. Lowest HRS current is obtained for narrow, metallic filaments. Additionally, RTN adds a stochastic component to the HRS current that is minimized for wider, less conductive filaments, making these more robust at reading voltage.