Session 3A-3

Full Metal Gate with Borderless Contact for 14nm and Beyond

 

Abstract

Tungsten based full metal gate (FMG) stacks that are equivalent to or better than metal inserted poly Si (MIPS) stack have been developed for borderless contact for 14nm and beyond. FMG stacks show excellent Tinv scaling (0.92 and 1.15nm for NFET and PFET, respectively) and enhanced hole mobility by 20% compared to MIPS gate stack. Fully integrated short channel devices and borderless contacts are demonstrated at 80nm contacted gate pitch.