Session 3B-1

High Performance Unipolar AlOy/HfOx/Ni based RRAM
Compatible with Si Diodes for 3D Application

 

Abstract

We report a high performance unipolar RRAM with Ni-electrode /HfOx /AlOy /p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ~105; 2) ~100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120 °C), and high temperature operating stability (> 200 °C) without threshold resistive switching; 6) a fast set/rest speed of ~10/30 ns; 7) full CMOS compatible materials and process: with p+-Si bottom electrode, avoiding the use of noble metals, e.g. Pt.