Session 3B-3

Highly Reliable and Fast Nonvolatile Hybrid Switching ReRAM Memory
Using Thin Al^₂O₃ Demonstrated at 54nm memory Array

 

Abstract

For the first time, very fast (10ns at even Reset) and high reliable (150°C 100h) ReRAM memory was demonstrated at 54nm 256k bits array. Reset current successfully decreased up to 20µA using Al2O3 which acts as a tunnel barrier and filament source in TiO2/Al2O3 stack. From statistical analysis, the possibility of increasing array size and the key factor of resistance distribution were investigated.