Session 3B-4
High Thermal Robust ReRAM
with a New Method for Suppressing Read Disturb
| A thermal robust ReRAM with a new method for suppressing read disturb was investigated for the automobile application. Asymmetric structure such as Ru/TiO2/Ta2O5/TiO2/W with a new operation method (write: positive bias for top Ru/read: positive bias for bottom W) could much improved the read disturb immunity. Furthermore, scalability up to 28-nm node device, low switching current (25µA), low forming voltage (<3V), high read speed (<10 nsec), and high thermal robustness (200°C) were achieved. |