Session 3B-5

Bi-layered RRAM with Unlimited Endurance
and Extremely Uniform Switching

 

Abstract

We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 1011 cycles at 30ns, data retention of >104s at 200°C, and calculated bit error rate below 10-11.