Session 4A-2
High performance Extremely-thin Body III-V-On-Insulator MOSFETs
on a Si substrate with Ni-InGaAs metal S/D
and MOS Interface Buffer Engineering
| We have demonstrated the extremely thin body (ETB) In0.7Ga0.3As-on-insulator (-OI) MOSFETs on Si substrates with Ni-InGaAs S/D structures. It has been found that low doping concentrations, In-rich channels (In0.7Ga0.3As), and buffer engineering provide high mobility of 2810 cm2/Vs even the total InGaAs thickness of 10 nm. This is the first demonstration of ETB III-V-OI MOSFETs combined with the Schottky-barrier free metal S/D technology. We have also achieved excellent ID-VG characteristics with Ion/Ioff ratio of over 107 and low S.S. of 103 mV/dec in 2/1/3 nm-thick InGaAs MOSFETs with buffer layers. |