Session 4A-3
CMOS integration of InGaAs nMOSFETs
and Ge pMOSFETs with self-align Ni-based metal S/D
using direct wafer bonding
| We have demonstrated the integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-Ge and Ni-InGaAs metal source/drain on a Ge substrate by direct wafer bonding, for the first time. Ni-based metal source/drain allows us to fabricate high performance nMOSFETs and pMOSFETs at the same time. InGaAs nMOSFET and Ge pMOSFET have exhibited the high electron and hole mobility of 1800 and 260 cm2/Vs and the mobility enhancement against Si of 3.5 and 2.3, respectively. |