Session 4A-4

Scalable TaN Metal Source/Drain
& Gate InGaAs/Ge n/pMOSFETs

 

Abstract

We propose a scalable CMOS fabrication process for high mobility InGaAs/Ge dual channels using a common TaN metal source/drain and gate (Metal-SD&G) under consideration of material band lineup. By combining common TaN Metal-SD with compatible TaN/Al2O3 gate stacks, we have successfully demonstrated operation of both InGaAs nMOS and Ge pMOS devices fabricated at the same time. Excellent InGaAs/Ge n/pMOSFET performances, such as the SS of 70mV/dec and 100mV/dec for InGaAs nMOS and Ge pMOS, respectively, have been achieved. We have also verified the scalability of TaN Metal-SD&G InGaAs nMOSFETs down to 50nm with high immunity to SCEs.