Session 4B-1

A Highly Scalable Vertical Gate (VG) 3D NAND Flash
with Robust Program Disturb Immunity
Using a Novel PN Diode Decoding Structure

 

Abstract

A novel PN diode decoding method for 3D NAND Flash is proposed. The PN diodes are fabricated self-aligned at the source side of the Vertical Gate (VG) 3D NAND architecture. Contrary to the previous 3D NAND approaches, there is no need to fabricate plural string select (SSL) transistors inside the array, thus enabling a highly symmetrical and scalable cell structure. A novel three-step programming pulse waveform is integrated to implement the program-inhibit method, capitalizing on that the PN diodes can prevent leakage of the self-boosted channel potential. A large program-disturb-free window >5V is demonstrated.