Session 4B-3

A novel low-voltage hot-carrier (LVHC) programming method
for scaled NAND flash cell

Abstract
A novel low-voltage, hot-carrier programming method for NAND flash cell is presented. By suitably controlling the NAND string's conductance, a sufficient program current along with a high heating field is induced to cause hot carrier injection. This method greatly alleviated the requirements for high-voltage devices and their fabrication process. Besides, it is less sensitive to process variation and possesses better reliability than FN programming.