Session 4B-4

A Novel Junctionless All-Around-Gate SONOS Device
with a Quantum Nanowire on a Bulk Substrate
for 3D Stack NAND Flash Memory

 

Abstract

A novel junctionless all-around-gate SONOS device (4nm width, 20nm gate length) with the homogeneously n+-doped quantum SiNW is demonstrated on a bulk substrate. The results show a high read current (> 10 µA), a large VT margin (> 6.5 V), a narrowed distribution of the erased VT, and improved cyclic endurance. Moreover, the vertically integrated 9-layer single-crystalline SiNWs are successfully achieved by the developed deep RIE process for 3D NAND Flash memory.