Session 4B-5

Extraction of 3-D Trap Position in NAND Flash Memory
Considering Channel Resistance of Pass Cells
and Bit-Line Interferenc

 

Abstract

We extract the exact position and energy of trap at tunnel oxide which induces RTN by considering the channel resistances of pass cells in floating gate NAND flash memory string. Moreover, the trap position along the width direction is also founded by using an interference effect between BLs.