Session 5A-2

Novel Tellurium Co-Implantation and Segregation
for Effective Source/Drain Contact Resistance Reduction
and Gate Work Function Modulation in n-FinFETs

 

Abstract

We report the demonstration of a new contact resistance reduction technology for n+ Si S/D using Tellurium (Te) implant and segregation, achieving a low electron SBH of 0.11 eV. The Te implant reduced contact resistance in n-FinFETs by 40 %. When integrated in a process flow where Te is also introduced into the gate, improvement in gate electrostatic control is observed, leading to an improvement in ballistic efficiency. At IOff of 100 nA/µm, Te implant increases IOn by 22 % as compared with control FinFETs without Te implant.