Session 5A-3

Exact Control of Junction Position and Schottky Barrier Height
in Dopant-Segregated Epitaxial NiSi₂
for High Performance Metal Source/Drain MOSFETs

 

Abstract

This paper reports junction position control and the Schottky barrier height tuning in ultrathin SOI MOSFETs with epitaxial NiSi2 source/drain (S/D). We demonstrate the junction position control in the lateral direction with preserving the (111) facet in 8-nm-thick SOI using epitaxial NiSi2 growth. Schottky barrier height at epitaxial NiSi2 can be easily controlled by P+ implanted dose using dopant segregation technique, and the saturation drain current (ID Sat.) increases due to lowering Schottky barrier height. Thus, epitaxial NiSi2 is a promising metal S/D for future MOSFETs.